 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY DATA SHEET TSC TS12N20CS Single N-Channel 4.5V Specified MicroSurfTM Drain-Source Voltage 20 Volt Current ID 12 Ampere Features 12A, 20V RDS(ON)=3.9m at 4.5Volts 12A, 20V Qg =19.8nC at 4.5Volts Low profile package: less than 1mm height when mounted on PCB Occupies only 1/3 the area of SO-8 Excellent thermal characteristics High power and current handling capability Lead free solder balls available Description Taiwan Semiconductor's new low cost, state of the art MicroSurfTM lateral MOSFET process technology in chipscale bondwireless packaging minimizes PCB space and RDS(ON) plus provides an ultra-low Qg X RDS(ON) figure of merit. Internal Block Diagram D Ds g endin tP Paten G S Pin Configuration Standard Application MicroSurfTM for High Frequency DC-DC Converters Bottom: Bump Side Rev. 1 05/2003 -1- TSC Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) TA = 25C unless otherwise noted Symbol VDSS VGSS ID Value 20 +12 6 25 Unit V V A A W C PD TJ, TSTG 2.2 - 55 to +150 Operating and Storage Junction Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case RJA RJR RJC 56 4.5 0.6 C/ W C/ W C/ W TS12N20CS Electrical Specifications Characteristics Drain-Source Breakdown Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Drain to Drain Sense Leakage Static Drain-Source On-Resistance Drain Sense On-Resistance Gate Threshold Voltage Total Gate Charge Gate Resistance Output Capacitance Input Capacitance Reverse transfer capacitance Reverse Recovery time Source-Drain Diode Forward On-Voltage Source-Drain Diode On-State Drain Current Avalanche Energy UIS BVDSS IGGS IDSS IDDS RDS(on) RDSDS(on) VGS(th) Qg Rg Coss Ciss Crss trr TA = 25C unless otherwise specified Symbol Conditions VGS= 0V, ID= 250A VGS= 12V, VDS=0V Tj=150C, VDS=20V, VGS= 0V Tj=150C, VDS=20V, VGS= 0V VGS= 4.5V, ID= 12A VGS= 4.5V, ID= 0.35A VDS=VGS, ID= 250uA VDS=20V, VGS= 4.5V, ID= 12A VDS=0V, f =1MHz VDS=20V, VGS=0V, f =1MHz VDS=20V, VGS=0V, f =1MHz VDS=20V, VGS=0V, f =1MHz If = 12A, di/dt =100A/us Tj=150C Is= 12A, VGS=0V Min 20 ------------- Typ ----3.9 137 1.3 19.8 0.4 2.4 320 TBD -- Max Unit -150 250 250 --------40 V nA uA uA m m V nC Ohms nF pF pF ns VSD -- 0.75 -- V ID(on) Eas VGS=4.5V, VDS=1V Single Pulse 10us, VDS>BVDSS 25 2.5 --- --- A mJ Rev. 1 05/2003 -2- |
Price & Availability of TS12N20CS
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |